Local Electrostatic Charging of Semiconductor Thin Films
نویسندگان
چکیده
A nanocrystalline diamond (NCD) thin film (80 nm) is deposited on a p-type Si substrate and oxygen terminated by radio frequency (r.f.) oxygen plasma. An atomic force microscope (AFM) is used to induce electrostatically charged micrometer-sized areas on the diamond film by applying a bias voltage on the AFM tip during contact mode scan. Trapped charge is detected by Kelvin force microscopy (KFM) showing a potential difference of up to 1.4 V. The potential amplitude and spatial distribution is controlled by the bias voltage applied on the tip (±30 V). Contribution of diamond bulk and grain boundaries to the charging effects appears uniform. We compare the results with the charging of bare Si substrate.
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